IPD65R660CFDATMA2
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
LOW POWER_LEGACY
PDF
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.364
≥1 USD $1.364
≥10 USD $1.13256
≥100 USD $0.901208
≥500 USD $0.76259
≥1000 USD $0.647046
Inventory: 1114
Minimum: 1
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 700V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Rds On (Max) @ Id, Vgs 660m Ω @ 2.1A, 10V
FET Type N-Channel
Power Dissipation-Max 63W Tc
Reach Compliance Code compliant
Technology MOSFET (Metal Oxide)
Part Status Active
Series CoolMOS? CFD2
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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