Avalanche Energy Rating (Eas) 215 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 29A
Drain-source On Resistance-Max 0.38Ohm
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ