IPD60R2K1CEAUMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 2.3A TO-252-3
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.396
≥1 USD $0.396
≥10 USD $0.33968
≥100 USD $0.236368
≥500 USD $0.184571
≥1000 USD $0.160072
Inventory: 1261
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1 Ω @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.3A
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 11 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Alternative Model
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