IPD50R950CEATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 4.3A PG-T0252
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 68 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 12.8A
Drain-source On Resistance-Max 0.95Ohm
Continuous Drain Current (ID) 4.3A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 13V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Rds On (Max) @ Id, Vgs 950m Ω @ 1.2A, 13V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 53W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Discontinued
Pbfree Code yes
Series CoolMOS? CE
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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