IPD09N03LA G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 50A DPAK
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Buying Options
Total Price: USD $3.59
Unit Price: USD $3.5948
≥1 USD $3.5948
≥10 USD $2.94975
≥100 USD $2.8576
≥500 USD $2.76545
≥1000 USD $2.6733
Inventory: 1105
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1642pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0148Ohm
Pulsed Drain Current-Max (IDM) 350A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 75 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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