IPB80N06S3L-06
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO-263
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 250 mJ
Pulsed Drain Current-Max (IDM) 320A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.0056Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 39 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 43ns
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 9417pF @ 25V
Vgs(th) (Max) @ Id 2.2V @ 80μA
Rds On (Max) @ Id, Vgs 5.6m Ω @ 56A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 136W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 136W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 80A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series OptiMOS?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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