Avalanche Energy Rating (Eas) 290 mJ
Max Dual Supply Voltage 650V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11.4A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 4.5V @ 400μA
Rds On (Max) @ Id, Vgs 310m Ω @ 4.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 104.2W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ