IPB60R105CFD7ATMA1
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
HIGH POWER_NEW
PDF
/
Buying Options
Total Price: USD $4.2
Unit Price: USD $4.1976
≥1 USD $4.1976
≥10 USD $3.52704
≥100 USD $2.853312
≥500 USD $2.536283
Inventory: 1008
Minimum: 1
-
+
Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 1752pF @ 400V
Vgs(th) (Max) @ Id 4.5V @ 470μA
Rds On (Max) @ Id, Vgs 105m Ω @ 9.3A, 10V
FET Type N-Channel
Power Dissipation-Max 106W Tc
Technology MOSFET (Metal Oxide)
Part Status Active
Series CoolMOS? CFD7
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
Recommended For You
IPB60R105CFD7ATMA1+price,IPB60R105CFD7ATMA1+datasheet,IPB60R105CFD7ATMA1+in stock,buy+IPB60R105CFD7ATMA1,finder+IPB60R105CFD7ATMA1,IPB60R105CFD7ATMA1+tutorials,IPB60R105CFD7ATMA1+download