IPB044N15N5ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 174A TO263-7
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Buying Options
Total Price: USD $7.44
Unit Price: USD $7.4448
≥1 USD $7.4448
≥10 USD $6.38264
≥100 USD $5.31916
≥500 USD $4.693392
Inventory: 1406
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 87A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 75V
Current - Continuous Drain (Id) @ 25°C 174A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 174A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 696A
Avalanche Energy Rating (Eas) 470 mJ
Max Junction Temperature (Tj) 175°C
Dimensions
Height 4.5mm
Compliance
RoHS Status ROHS3 Compliant
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