Avalanche Energy Rating (Eas) 960 mJ
Pulsed Drain Current-Max (IDM) 385A
Drain-source On Resistance-Max 0.0041Ohm
Continuous Drain Current (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 7027pF @ 15V
Vgs(th) (Max) @ Id 2V @ 100μA
Rds On (Max) @ Id, Vgs 2.7m Ω @ 55A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 220
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ