IPA50R650CE
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 6.1A TO220FP
PDF
/
Buying Options
Total Price: USD $3.75
Unit Price: USD $3.75155
≥1 USD $3.75155
≥10 USD $3.07895
≥100 USD $2.98205
≥500 USD $2.8861
≥1000 USD $2.79015
Inventory: 9053
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 27.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.1A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6.1A
Drain-source On Resistance-Max 0.65Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 102 mJ
FET Feature Super Junction
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
IPA50R650CE+price,IPA50R650CE+datasheet,IPA50R650CE+in stock,buy+IPA50R650CE,finder+IPA50R650CE,IPA50R650CE+tutorials,IPA50R650CE+download