FET Feature Super Junction
Avalanche Energy Rating (Eas) 102 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 19A
Drain-source On Resistance-Max 0.65Ohm
Drain Current-Max (Abs) (ID) 6.1A
Drive Voltage (Max Rds On,Min Rds On) 13V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Rds On (Max) @ Id, Vgs 650m Ω @ 1.8A, 13V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 27.2W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ