Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30.4W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 4.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 42.9A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 231 mJ
FET Feature Super Junction