BUZ73L
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 7A TO-220AB
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Buying Options
Total Price: USD $7.76
Unit Price: USD $7.7634
≥1 USD $7.7634
≥10 USD $6.3707
≥100 USD $6.1712
≥500 USD $5.97265
≥1000 USD $5.77315
Inventory: 11308
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Avalanche Energy Rating (Eas) 120 mJ
Pulsed Drain Current-Max (IDM) 28A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.4Ohm
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 1.6V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Rise Time 60ns
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 400m Ω @ 3.5A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 40W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 40W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 7A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SIPMOS?
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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