BUZ31L
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 13.5A TO220AB
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.4332
≥1 USD $0.4332
≥10 USD $0.3553
≥100 USD $0.34485
≥500 USD $0.33345
≥1000 USD $0.32205
Inventory: 41002
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series SIPMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 13.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 7A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13.5A Tc
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 13.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 54A
Avalanche Energy Rating (Eas) 200 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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