FET Feature Temperature Sensing Diode
Avalanche Energy Rating (Eas) 1300 mJ
DS Breakdown Voltage-Min 55V
Pulsed Drain Current-Max (IDM) 180A
Drain-source On Resistance-Max 0.028Ohm
Drain Current-Max (Abs) (ID) 33A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
Vgs(th) (Max) @ Id 2V @ 90μA
Rds On (Max) @ Id, Vgs 18m Ω @ 12A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 120W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ