Feedback Cap-Max (Crss) 3.8 pF
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 8Ohm
Drain Current-Max (Abs) (ID) 0.15A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Input Capacitance (Ciss) (Max) @ Vds 19.1pF @ 25V
Vgs(th) (Max) @ Id 2V @ 20μA
Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ