BSS670S2L
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 540MA SOT-23
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥10 USD $0.0665
≥100 USD $0.0646
≥500 USD $0.0627
≥1000 USD $0.05985
Inventory: 202831
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 270mA, 10V
Vgs(th) (Max) @ Id 2V @ 2.7μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 540mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.26nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.825Ohm
DS Breakdown Voltage-Min 55V
Feedback Cap-Max (Crss) 10 pF
Compliance
RoHS Status RoHS Compliant
Alternative Model
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