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Package TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 0.09A SOT-89
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Buying Options
Total Price: USD $0.46
Unit Price: USD $0.46265
≥1 USD $0.46265
≥10 USD $0.37905
≥100 USD $0.36765
≥500 USD $0.3553
≥1000 USD $0.3439
≥1000 USD $0.30875
Inventory: 1113
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45 Ω @ 90mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 131pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.09A
DS Breakdown Voltage-Min 600V
Feedback Cap-Max (Crss) 4.4 pF

Compliance

RoHS Status Non-RoHS Compliant

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