BSS123 E6433
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 170MA SOT-23
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Feedback Cap-Max (Crss) 6 pF
DS Breakdown Voltage-Min 100V
Drain-source On Resistance-Max 10Ohm
Drain Current-Max (Abs) (ID) 0.17A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 2.67nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Input Capacitance (Ciss) (Max) @ Vds 69pF @ 25V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 360mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series SIPMOS?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Alternative Model
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