BSP373 E6327
RoHS
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Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.7A SOT-223
PDF
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Buying Options
Total Price: USD $195.94
Unit Price: USD $195.941993
≥1 USD $195.941993
≥10 USD $189.499029
≥25 USD $188.181755
≥50 USD $186.873635
≥100 USD $183.030006
≥500 USD $169.944296
Inventory: 1142
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS?
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 255
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 1.7A
Drain-source On Resistance-Max 0.3Ohm
Pulsed Drain Current-Max (IDM) 6.8A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 45 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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