Drain-source On Resistance-Max 0.8Ohm
Drain Current-Max (Abs) (ID) 1A
Max Dual Supply Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 21.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Input Capacitance (Ciss) (Max) @ Vds 372pF @ 25V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 1V @ 380μA
Rds On (Max) @ Id, Vgs 800m Ω @ 1A, 10V
Turn On Delay Time 4.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.8W Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ