DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.12Ohm
Drain Current-Max (Abs) (ID) 2.9A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Vgs(th) (Max) @ Id 4V @ 20μA
Rds On (Max) @ Id, Vgs 120m Ω @ 2.9A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 255
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ