BSP297 E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 660MA SOT-223
PDF
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 1112
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 2.64A
Drain Current-Max (Abs) (ID) 0.66A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 16.1nC @ 10V
Current - Continuous Drain (Id) @ 25°C 660mA Ta
Input Capacitance (Ciss) (Max) @ Vds 357pF @ 25V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 660mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.29.00.75
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SIPMOS?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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