BSP295E6327T
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 1.8A SOT223
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Rds On Max 300 mΩ
Input Capacitance 368pF
Continuous Drain Current (ID) 1.8A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
FET Type N-Channel
Power Dissipation-Max 1.8W Ta
Current Rating 1.8A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SIPMOS?
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package PG-SOT223-4
Number of Pins 4
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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