BSP295E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 1.8A SOT223
PDF
/
Buying Options
Total Price: USD $7.93
Unit Price: USD $7.92734
≥1 USD $7.92734
≥10 USD $7.478618
≥100 USD $7.055296
≥500 USD $6.655939
≥1000 USD $6.279182
Inventory: 1117
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Current Rating 1.8A
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 368pF
Rds On Max 300 mΩ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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