BSP135 E6906
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 120MA SOT-223
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Feature Depletion Mode
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 0.3A
Drain-source On Resistance-Max 60Ohm
Drain Current-Max (Abs) (ID) 0.1A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 5V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Vgs(th) (Max) @ Id 1V @ 94μA
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
FET Type N-Channel
Case Connection DRAIN
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Pin Count 4
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SIPMOS?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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