BSP129L6906HTSA1
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R
PDF
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.426931
≥1 USD $0.426931
≥10 USD $0.402764
≥100 USD $0.379968
≥500 USD $0.358456
≥1000 USD $0.33817
Inventory: 1206
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Case Connection DRAIN
Turn On Delay Time 4.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 350mA, 10V
Vgs(th) (Max) @ Id 1V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 108pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 5V
Rise Time 4.1ns
Drain to Source Voltage (Vdss) 240V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.35A
Drain-source On Resistance-Max 6Ohm
FET Feature Depletion Mode
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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