BSO4410
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 11.1A 8-SOIC
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Buying Options
Total Price: USD $8.73
Unit Price: USD $8.7305
≥1 USD $8.7305
≥10 USD $7.163
≥100 USD $6.93975
≥500 USD $6.71555
≥1000 USD $6.4923
Inventory: 1053
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 11.1A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 11.1A, 10V
Vgs(th) (Max) @ Id 2V @ 42μA
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.1A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 11.1A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 44.5A
Avalanche Energy Rating (Eas) 126 mJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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