BSO303SPNTMA1
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Dual P-Channel -30V MOSFET
PDF
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.577709
≥1 USD $0.577709
≥10 USD $0.545009
≥100 USD $0.514161
≥500 USD $0.485057
≥1000 USD $0.4576
Inventory: 1201
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 97 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 35.6A
Drain-source On Resistance-Max 0.021Ohm
Drain Current-Max (Abs) (ID) 8.9A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 1754pF @ 25V
Vgs(th) (Max) @ Id 2V @ 100μA
Rds On (Max) @ Id, Vgs 21m Ω @ 8.9A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.35W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED,LOGIC LEVEL COMPATIBLE
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series OptiMOS?
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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