Drain to Source Breakdown Voltage -20V
Max Dual Supply Voltage -20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.7A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 654pF @ 15V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 1.2V @ 25μA
Rds On (Max) @ Id, Vgs 67m Ω @ 4.7A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ