BSC883N03MSGATMA1
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 19A 8-Pin TDSON EP
PDF
/
Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Inventory: 38315
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 7.6ns
Drain to Source Voltage (Vdss) 34V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0046Ohm
Pulsed Drain Current-Max (IDM) 392A
DS Breakdown Voltage-Min 34V
Avalanche Energy Rating (Eas) 40 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
BSC883N03MSGATMA1+price,BSC883N03MSGATMA1+datasheet,BSC883N03MSGATMA1+in stock,buy+BSC883N03MSGATMA1,finder+BSC883N03MSGATMA1,BSC883N03MSGATMA1+tutorials,BSC883N03MSGATMA1+download