BSC882N03MSGATMA1
RoHS
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Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 22A 8-Pin TDSON EP T/R
PDF
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Buying Options
Total Price: USD $8.35
Unit Price: USD $8.34955
≥1 USD $8.34955
≥10 USD $6.85045
≥100 USD $6.6367
≥500 USD $6.42295
≥1000 USD $6.20825
Inventory: 7222
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 75 mJ
DS Breakdown Voltage-Min 34V
Pulsed Drain Current-Max (IDM) 400A
Drain-source On Resistance-Max 0.0033Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 24 ns
Fall Time (Typ) 9.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 34V
Rise Time 9ns
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 2.6m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Case Connection DRAIN
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta 69W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series OptiMOS?
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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