BSC097N06NSTATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DIFFERENTIATED MOSFETS
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Buying Options
Total Price: USD $0.99
Unit Price: USD $0.9944
≥1 USD $0.9944
≥10 USD $0.81312
≥100 USD $0.632192
≥500 USD $0.53585
≥1000 USD $0.436506
≥3000 USD $0.410916
Inventory: 4279
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14μA
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
Current - Continuous Drain (Id) @ 25°C 13A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0097Ohm
Pulsed Drain Current-Max (IDM) 184A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 13 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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