BSC080N03LSGATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP
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Buying Options
Total Price: USD $8.07
Unit Price: USD $8.0655
≥1 USD $8.0655
≥10 USD $6.6177
≥100 USD $6.4106
≥500 USD $6.20445
≥1000 USD $5.99735
Inventory: 1147
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 53A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 2.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Alternative Model
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