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BSC070N10NS5ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 80A TDSON-8
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Buying Options
Total Price: USD $1.59
Unit Price: USD $1.5928
≥1 USD $1.5928
≥10 USD $1.32264
≥100 USD $1.052392
≥500 USD $0.890472
≥1000 USD $0.75555
≥3000 USD $0.717772
Inventory: 36200
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 55 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.1mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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