Avalanche Energy Rating (Eas) 280 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.0065Ohm
Drain Current-Max (Abs) (ID) 20A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V
Current - Continuous Drain (Id) @ 25°C 20A Ta 95A Tc
Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 15V
Vgs(th) (Max) @ Id 2V @ 50μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 62.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ