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Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 100A TDSON-8
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 6530pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0037Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 800 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

IPP80N06S205AKSA1

IPP80N06S205AKSA1

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