Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 150°C