BSB017N03LX3 G
RoHS 
RoHS compliant
RoHS compliantPackage 3-WDSON
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-Channel 30V 32A (Ta), 147A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M?
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Buying Options
Total Price: USD $22.12
Unit Price: USD $22.1198
≥1 USD $22.1198
≥10 USD $18.14975
≥100 USD $17.5826
≥500 USD $17.01545
≥1000 USD $16.4483
Inventory: 1129
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
JESD-30 Code R-MBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 147A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 147A
Drain-source On Resistance-Max 0.0017Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 225 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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