AUIRLL024N
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 3.1A SOT-223
PDF
/
Buying Options
Total Price: USD $0.13
Unit Price: USD $0.13205
≥1 USD $0.13205
≥10 USD $0.1083
≥100 USD $0.1045
≥500 USD $0.10165
≥1000 USD $0.09785
Inventory: 1260
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 3.1A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 120 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
AUIRLL024N+price,AUIRLL024N+datasheet,AUIRLL024N+in stock,buy+AUIRLL024N,finder+AUIRLL024N,AUIRLL024N+tutorials,AUIRLL024N+download