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RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 180A D2PAK
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Buying Options
Total Price: USD $12.44
Unit Price: USD $12.44215
≥1 USD $12.44215
≥10 USD $10.20965
≥100 USD $9.89045
≥500 USD $9.57125
≥1000 USD $9.25205
Inventory: 1252
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.67mm
Height 4.83mm

Technical

Pulsed Drain Current-Max (IDM) 720A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0047Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 77 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 86 ns
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 9575pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 106A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 21 ns
Case Connection DRAIN
Power Dissipation 375W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 16 Weeks

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