Pulsed Drain Current-Max (IDM) 720A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0047Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Input Capacitance (Ciss) (Max) @ Vds 9575pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 106A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ