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AUIRFN8403TR

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 95A 8PQFN
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Buying Options
Total Price: USD $8.11
Unit Price: USD $8.114401
≥1 USD $8.114401
≥10 USD $7.65509
≥100 USD $7.221787
≥500 USD $6.813008
≥1000 USD $6.427367
Inventory: 1128
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRFN8403
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.3W Ta 94W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3174pF @ 25V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 37 ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 95A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 492A
DS Breakdown Voltage-Min 40V

Dimensions

Height 1.17mm
Length 5.85mm
Width 5mm

Compliance

RoHS Status ROHS3 Compliant

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