AUIRFL024NTR
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 2.8A SOT-223
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Buying Options
Total Price: USD $5.64
Unit Price: USD $5.63825
≥1 USD $5.63825
≥10 USD $4.6265
≥100 USD $4.4821
≥500 USD $4.3377
≥1000 USD $4.19235
Inventory: 27093
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.075Ohm
Drain Current-Max (Abs) (ID) 0.0028A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.8A
Turn-Off Delay Time 22.2 ns
Fall Time (Typ) 17.7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 13.4 ns
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 75m Ω @ 2.8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.1 ns
Case Connection DRAIN
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 9 Weeks
Alternative Model
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