AUIRF7805Q
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 30V 13A 8-SO
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Buying Options
Total Price: USD $0.83
Unit Price: USD $0.827127
≥1 USD $0.827127
≥200 USD $0.320348
≥500 USD $0.309844
≥1000 USD $0.30328
Inventory: 1257
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.011Ohm
Drain Current-Max (Abs) (ID) 13A
JEDEC-95 Code MS-012AA
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 11m Ω @ 7A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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