Max Junction Temperature (Tj) 175°C
Avalanche Energy Rating (Eas) 70 mJ
Pulsed Drain Current-Max (IDM) 272A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.007Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 68A Tc
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Rds On (Max) @ Id, Vgs 7m Ω @ 41A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta 63W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ