Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 41W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.5 ns
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 31m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.9A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Polarity/Channel Type P-CHANNEL
Turn-Off Delay Time 7.9 ns
Continuous Drain Current (ID) 5.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.031Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 95A