Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0024Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 48 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 231W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ