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RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 235A D2PAK
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Buying Options
Total Price: USD $40.82
Unit Price: USD $40.8234
≥1 USD $40.8234
≥10 USD $33.49605
≥100 USD $32.44915
≥500 USD $31.40225
≥1000 USD $30.35535
Inventory: 1116
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.67mm
Height 4.83mm

Technical

Nominal Vgs 2 V
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0024Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 48 ns
Fall Time (Typ) 37 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 100 ns
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 24 ns
Case Connection DRAIN
Power Dissipation 231W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 231W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 16 Weeks

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