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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 24V 195A TO220AB
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Buying Options
Total Price: USD $4.08
Unit Price: USD $4.07645
≥1 USD $4.07645
≥10 USD $3.34495
≥100 USD $3.24045
≥500 USD $3.13595
≥1000 USD $3.03145
Inventory: 1130
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.82mm
Length 10.6426mm
Height 16.51mm

Technical

Avalanche Energy Rating (Eas) 270 mJ
Drain to Source Breakdown Voltage 24V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 2V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 83 ns
Fall Time (Typ) 120 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 190ns
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 7590pF @ 24V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.5m Ω @ 195A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 16 Weeks

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