AUIRF1018E
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB
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Buying Options
Total Price: USD $2.01
Unit Price: USD $2.006197
≥1 USD $2.006197
≥10 USD $1.892638
≥100 USD $1.78551
≥500 USD $1.684449
≥1000 USD $1.589101
Inventory: 1126
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 79A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0084Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 88 mJ
Dimensions
Height 9.02mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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