IRF1104LPBF
RoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE AVALANCHE RATED HIGH RELIABILITY ULTRA LOW RESISTANCE EAR99 Mosfet Transistor 100A 170W 40V 0.009Ohm
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Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 1181
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time [object Object]
Physical
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
Technical
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-262AA
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 350 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 170W
Compliance
RoHS Status RoHS Compliant
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